Nitronex (Durham, NC) offers the XPT1015 28V, DC-3.0 GHz, 40W power transistor with 17.5 dB small-signal gain, and 65% peak drain efficiency at 2 GHz. The thermal resistance of the transistor is 1.9 °C/W. It is designed for severe operating environments. The company’s patented SIGANTIC ® GaN-on-Si process uses an industry-standard 4" silicon substrate, resulting in a robust, scalable supply chain. Applications include military communications, CATV, RADAR, commercial wireless, satellite communications, and point-to-point microwave.

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RF & Microwave Technology Magazine

This article first appeared in the August, 2012 issue of RF & Microwave Technology Magazine.

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