Laser diodes and laser diode arrays (LDAs) are widely used throughout military systems, for sighting and range finding, but also at high power levels as offensive and defensive weapons. In companion with much higher-power chemical lasers, these high-power optical sources can generate kilowatts of optical power (as arrays) for use in neutralizing incoming missiles, rockets, and armaments and for long-distance offensive strikes. But laser diodes are also still inefficient, and a great deal of the energy supplied to a laser diode or an LDA is converted into heat, which must be safely dissipated to ensure a long operating lifetime for the solid-state devices.

FPGAs have become an increasingly important resource for software radio systems. Programmable logic technology now offers significant advantages for implementing software radio functions such as DDCs (Digital Downconverters). Over the past few years, the functions associated with DDCs have seen a shift from being delivered in ASICs (Application-Specific ICs) to operating as IP (Intellectual Property) in FPGAs.

Artificial intelligence developments are set to fundamentally transform mobility, whether it is mobility of weapon payloads, supply deliveries, urban commuters, warehouse goods, delivery packages, or intercontinental bulk shipments.

Enhancing the performance of GeSn p-i-n photodiodes using gold metal nanostructures.

The goal of this research project was to advance the science and technology of silicon-based photonic devices using SiGeSn heterostructures. Such devices work in mid-IR spectral range and form the foundation for mid-IR photonics that enable on-chip systems for applications ranging from vibrational spectroscopy, chem/bio sensing, medical/health uses, to environmental monitoring. This project was mostly directed toward improving GeSn detectors with the use of surface plasmons induced by carefully designed metal nanostructures. The goal was to replace the current mid-IR detectors that are usually photodiodes made from narrow bandgap III-V or II-VI semiconductor compounds such as InGaAs, InSb, HgCdTe (MCT) or type-II In-GaAs/InGaSb superlattice. These photodiodes are incompatible with the CMOS process and cannot be easily integrated with Si electronics. The GeSn mid-IR detectors developed in this project are fully compatible with the CMOS process.

The purpose of this research was to investigate non-volatile memory device technologies that could be applied to reconfigurable electronics applications to provide power reduction, radiation tolerance, smaller size, and improved reliability over existing non-volatile memory devices. The research encompasses: 1) materials and device design, and 2) fabrication and testing of the devices. The types of memory devices that were investigated are divided into three categories:

Mouser Electronics, Inc. (Mansfield, TX) is now stocking the MSP432 mixed-signal microcontrollers from Texas Instruments (TI). TI’s MSP432 microcontrollers are based on a powerful, 32-bit ARM® Cortex®‑M4F core with a floating point unit and memory protection management. The microcontroller includes two 16-bit timers, four 32-bit timers, and a 14-bit analog to digital converter (ADC) that converts at 1MSPS. The microcontroller also boasts four high-drive input and output (I/O) pins that can support up to 20mA. The microcontrollers support capacitive touch capability, as well as digital glitch filtering on some I/O pins.